This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

In previous parts of this series we reviewed the basic transistor parameters that determine ac voltage gain and practical considerations limiting high gain. The role of a coupling capacitor was ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

The company’s first bipolar transistors in its miniature PowerDI5 surface-mount package are designed on a fifth-generation matrix emitter process, yielding a range of 12 NPN and PNP transistors with a ...

Indium selenide (InSe), a next-generation 2D semiconductor nanomaterial, has seen attention for its superior electron mobility compared to silicon semiconductors and a saturation speed more than twice ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...