EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
Science Daily

X-ray data-enhanced computational method can determine crystal structures of multiphase materials

The new method can determine crystal structures underlying experimental data thus far difficult to analyze. A joint research team led by Yuuki Kubo and Shiji Tsuneyuki of the University of Tokyo has ...
Ars Technica

Glowing silicon nanowire reveals how to put optics in your CPU

Ah, yes Germanium the first material Integrated Circuits where made of. In the mean time other variants of fast CMOS circuits are being produced or nearing mass production, e.g. Germanium pFET ...
Nanowerk

Silicon's secret shapes: Scientists shed light on rare hexagonal forms

Scientists uncovered rare hexagonal silicon forms (2H, 4H, 6H) created by stress and heat, challenging assumptions about this key electronic material. This is not the first time hexagonal silicon has ...