Vishay Intertechnology, Inc. released two new 100 V n-channel TrenchFET® power MOSFETs that extend Vishay’s ThunderFET® technology to smaller package sizes. The SiB456DK and SiA416DJ are the ...

Vishay Intertechnology, Inc. released a new n-channel TrenchFET® power MOSFET in the thermally enhanced PowerPAK® SO-8 package that extends the company’s ThunderFET® technology to 150 V. The Vishay ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...

Toshiba Electronics Europe GmbH has introduced the TPHR6704RL, a 40V N-channel power MOSFET fabricated using its latest-generation U-MOS11-H process. The device is optimised for SMPS used in data ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) expands its PowerDI8080-5 automotive-compliant* N-channel MOSFET portfolio with the introduction of an industry-leading, ultra-low RDS(ON), 100V MOSFET.

Texas Instruments (TI) (NASDAQ: TXN) introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Diodes Incorporated has expanded its PowerDI8080-5 automotive-compliant N-channel MOSFET portfolio with the introduction of an industry-leading, ultra-low RDS(ON), 100V MOSFET. Introduced alongside ...

Vishay Intertechnology, Inc. introduced a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices April 5, 2010 Vishay Intertechnology, Inc.