Among the competing semiconductor technologies for power electronics, GaN already enjoys significant success. This material ...
Combining GaN transistors with silicon-based digital circuits enables complex computing functions built directly into power ...
Researchers at Pohang University of Science and Technology has developed a way to float 10-micrometer-thick silicon off its ...
Chipmaking systems create the smallest atomic-scale features in 3D Gate-All-Around transistorsPrecision™ Selective Nitride PECVD preserves ...
Abstract: We investigate the bilayer conduction in undoped Si/SiGe heterostructure field-effect transistors (FETs) and its effects on hysteresis characteristics at temperatures from 300 to 1.8 K. We ...
Confined molecules inside carbon nanotubes polarize under gate voltage, creating transistors with three stable logic states from a single material system.
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